RD09MUP2 -- RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
FEATURES
•High power gain:
Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
•High Efficiency: 50%min. (520MHz)
•Integrated gate protection diode
APPLICATION
For output stage of high power amplifiers in
UHF band mobile radio sets.
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型號 | 品牌 | 批號 | 封裝 | 數(shù)量 | 備注 | 資料 |
RD06HVF1 | MIT | 13+ | TO-220S | 13528 | Origina in stock 原裝現(xiàn)貨 | |
RD09MUP2 | MIT | 14+RoHS | Standard | 66544 | Origina in stock 原裝現(xiàn)貨 | |
RD06HVF1-101 | MIT | 13+ | T0-220 | 83465 | 原裝正品(New and Original) | |
RD00HHS1 | Mit | 16+ | standard | 874 | 全新原裝New and original have in stock | |
RD00HVS1 | Mit | 16+ | standard | 527 | 全新原裝New and original have in stock | |
RD01MUS1 | Mit | 16+ | standard | 240 | 全新原裝New and original have in stock | |
RD01MUS2B | Mit | 16+ | standard | 140 | 全新原裝New and original have in stock | |
RD02LUS2 | Mit | 16+ | standard | 427 | 全新原裝New and original have in stock |