RD06HVF1 - MOS FET type transistor specifically designed for VHF RF power amplifiers applications. - Mitsubishi Electric Semiconductor

FEATURES

High power gain: 

Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

APPLICATION

For output stage of high power amplifiers in 

VHF band mobile radio sets.

**注意 & Noted:

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