產(chǎn)品資訊

M28F101-150P1

型號：M28F101-150P1
品牌：ST

批號：13+RoHs
封裝：DIP-32
原價：30
數(shù)量：50000
PDF電子文檔：

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備注：100%原裝正品現(xiàn)貨

詳細(xì)描述

M28F101-150P1

1 Mb 128K x 8, Chip Erase FLASH MEMORY

5V ±10% SUPPLY VOLTAGE

12V PROGRAMMING VOLTAGE

FAST ACCESS TIME: 70ns

BYTE PROGRAMING TIME: 10µs typical

ELECTRICAL CHIP ERASE in 1s RANGE

LOW POWER CONSUMPTION

Stand-by Current: 100µA max

10,000 ERASE/PROGRAM CYCLES

INTEGRATED ERASE/PROGRAM-STOP

TIMER

OTP COMPATIBLE PACKAGES and PINOUTS

ELECTRONIC SIGNATURE

ManufacturerCode: 20h

Device Code: 07h

DESCRIPTION

The M28F101 FLASH Memory is a non-volatile

memory which may be erased electrically at the

chip level and programmed byte-by-byte. It is organisedas 128K bytes of 8 bits.It usesa command

and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for

applications where the memory has to be reprogrammed in the equipment. The access time of

70ns makes the device suitable for use in high

speed microprocessor systems.

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