H27U8G8G5DTR-BC 4 Gbit (512M x 8 bit) NAND Flash
FEATURES SUMMARY
DENSITY
4Gbit: 4096blocks
Nand FLASH INTERFACE
NAND Interface
ADDRESS / DATA Multiplexing
SUPPLY VOLTAGE
Vcc = 3.0/1.8V Volt core supply voltage for Program,
Erase and Read operations.
MEMORY CELL ARRAY
X8: (2K + 64) bytes x 64 pages x 4096 blocks
X16: (1k+32) words x 64 pages x 2048 blocks
PAGE SIZE
X8: (2048 + 64 spare) bytes
X16:(1024 + 32spare) Words
Block SIZE
X8: (128K + 4K spare) bytes
X16:(64K + 2K spare) Words
PAGE READ / PROGRAM
Random access: 25us (Max)
Sequentiall access: 25ns / 45ns (3.0V/1.8V, min.)
Program time(3.0V/1.8V): 200us / 250us (Typ)
Multi-page program time (2 pages):
200us / 250us (3.0V/1.8V, Typ.)
BLOCK ERASE / MULTIPLE BLOCK ERASE
Block erase time: 3.5 ms (Typ)
Multi-block erase time (2 blocks):
3.5ms/ 3.5ms (3.0V/1.8V, Typ.)
SEQURITY
OTP area
Sreial number (unique ID)
Non-volatile protection option for OTP and Block0(Opt.)
Hardware program/erase disabled during
power transition
ADDTIONAL FEATURE
Multiplane Architecture
: Array is split into two independent planes.
Parallel operations on both planes are available, having
program and erase time.
Single and multiplane copy back program with automatic
EDC (error detection code)
Single and multiplane page re-program
Single and multiplane cache program
Cache read
Multiplane block erase
Reliability
100,000 Program / Erase cycles (with 1bit /528Byte ECC)
10 Year Data retention
ONFI 1.0 COMPLIANT COMMAND SET
ELECTRONICAL SIGNATURE
Munufacture ID: ADh
Device ID
PACKAGE
Lead/Halogen Free
TSOP48 12 x 20 mm
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