RJK0365 RJK0365DPA -- Silicon N Channel Power MOS FET Power Switching
Features
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance RDS(on) = 7.0 m? typ. (at VGS = 10 V)
• Pb-free
| FET 類型 |
MOSFET N 通道，金屬氧化物 |
| FET 功能 |
邏輯電平門 |
| 漏源極電壓 (Vdss) |
30V |
| 電流 - 連續(xù)漏極 (Id)（25°C 時） |
30A （Ta） |
| 不同 Id、Vgs 時的 Rds On（最大值） |
9.1 毫歐 @ 15A，10V |
| 不同 Id 時的 Vgs(th)（最大值） |
- |
| 不同 Vgs 時的柵極電荷 (Qg) |
7.6nC @ 4.5V |
| 不同 Vds 時的輸入電容 (Ciss) |
1180pF @ 10V |
| 功率 - 最大值 |
30W |
| 安裝類型 |
表面貼裝 |
| 封裝/外殼 |
8-WDFN 裸露焊盤 |
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