4 M × 4 BANKS × 16 BITS DDR SDRAM

 

 

FEATURES 

2.5V ±0.2V Power Supply for DDR266/333/400 

2.6V ±0.1V Power Supply for DDR500 

Up to 250 MHz Clock Frequency 

Double Data Rate architecture; two data transfers per clock cycle 

Differential clock inputs (CLK and  CLK ) 

DQS is edge-aligned with data for Read; center-aligned with data for Write 

CAS Latency: 2, 2.5 and 3 

Burst Length: 2, 4 and 8 

Auto Refresh and Self Refresh 

Precharged Power Down and Active Power Down 

Write Data Mask 

Write Latency = 1 

7.8µS refresh interval (8K/64 mS refresh) 

Maximum burst refresh cycle: 8 

Interface: SSTL_2 

Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant 

 

 

Because of wholesale price is different from sample price, our website can not state. Please send your required part number via email to Sales@hkmjd.com or add our skype id mjdccm898 for online talking.As well as welcome you call us : 0755-83957301  We will send offer for you;  Sometimes manufacturer's price is unstable, so we don't adjust price in time. if you feel price is a little high for you, just feel free to contact us for consultation. Thank you for your support ！

 

 

批發(fā)與零售價位不同,無法一一明示,詳情請通過郵件或客服咨詢(國內(nèi)銷售部電話:0755-83957301,企業(yè)QQ: 2850151585), 由于電子元器件價格不穩(wěn)定,時常有稍許變動,本公司未能及時調(diào)整,如您覺得售價不適，請與我們說明并適當(dāng)議價,謝謝支持。