512K X 8 CMOS FLASH MEMORY

 

 

FEATURES

 Single 5-volt write (erase and program) 

operations

 Fast page-write operations

 256 bytes per page

 Page write (erase/program) cycle: 5 mS 

(typ.)

 Effective byte-write (erase/program) cycle 

time: 19.5 mS

 Optional software-protected data write

 Fast chip-erase operation: 50 mS

 Two 16 KB boot blocks with lockout

 Typical page write (erase/program) cycles: 

1K/10K (typ.)

 Read access time: 90/120 nS

 Ten-year data retention

 Software and hardware data protection

 Low power consumption

 Active current: 25 mA (typ.)

 Standby current: 20 mA (typ.)

 Automatic write (erase/program) timing with 

internal VPP generation

 End of write (erase/program) detection

 Toggle bit

 Data polling

 Latched address and data

 All inputs and outputs directly TTL compatible

 JEDEC standard byte-wide pinouts

 Available packages: TSOP and PLCC

 

 

 

 

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