W29C011A-15
128K X 8 CMOS FLASH MEMORY
FEATURES
Single 5-volt program and erase operations
Fast page-write operations
128 bytes per page
Page program cycle: 10 mS (max.)
Effective byte-program cycle time: 39 mS
Software-protected data write
Fast chip-erase operation: 50 mS
Read access time: 150 nS
Page program/erase cycles: 1,000
Ten-year data retention
Software and hardware data protection
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20 mA (typ.)
Automatic program timing with internal VPP
generation
End of program detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard byte-wide pinouts
Available packages: 32-pin 600 mil DIP, 450
mil SOP and PLCC
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批發(fā)與零售價位不同,無法一一明示,詳情請通過郵件或客服咨詢(國內(nèi)銷售部電話:0755-83957301,企業(yè)QQ2850151585), 由于電子元器件價格不穩(wěn)定,時常有稍許變動,本公司未能及時調(diào)整,如您覺得售價不適,請與我們說明并適當(dāng)議價,謝謝支持。