K9K1G08U0M-YCBO

128M x 8 Bit NAND Flash Memory

Features

Voltage Supply  : 2.7V~3.6V

Organization

Memory Cell Array : (128M + 4,096K)bit x 8bit

Data Register : (512 + 16)bit x8bit multipled by eight planes

Automatic Program and Erase

Page Program : (512 + 16)Byte

Block Erase : (16K + 512)Byte

528-Byte Page Read Operation

Random Access : 12ms(Max.)

Serial Page Access : 50ns(Min.)

Fast Write Cycle Time

Program time : 200ms(Typ.)

Block Erase Time : 2ms(Typ.)

Command/Address/Data Multiplexed I/O Port

Hardware Data Protection

Program/Erase Lockout During Power Transitions

Reliable CMOS Floating-Gate Technology

Endurance : 100K Program/Erase Cycles

Data Retention : 10 Years

Command Register Operation

Intelligent Copy-Back Operation

Package : 

K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 : 

    48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

Simultaneous Four Page/Block Program/Erase

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