Broadband internal matching
• Typical EDGE performance
- Average output power = 26 W
- Gain = 18 dB
- Efficiency = 44%
• Typical CW performance
- Output power at P–1dB = 75 W
- Gain = 17 dB
- Efficiency = 67%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V, 55 W
(CW) output power
• Pb-free and RoHS compliant
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型號(hào) | 品牌 | 批號(hào) | 封裝 | 數(shù)量 | 備注 | 資料 |
PTFB183404E | INFINEON | 13+ | H-36275-8 | 42452 | Brand new 原裝現(xiàn)貨 | |
PTFB182503EL | INFINEON | 10+ | 高頻管 | 1464 | 原裝現(xiàn)貨original spot stock | |
PTFA092213ELV4 | INFINEON | 11+ | SMD | 44562 | 原裝現(xiàn)貨original spot stock | |
PTFA080551 | Infineon | 13+ROHS | RF Power Transistor | 74585 | 原裝現(xiàn)貨100% new and original in stock | |
PTFA080551E | Infineon | 13+ROHS | RF Power Transistor | 45863 | 原裝現(xiàn)貨100% new and original in stock | |
PTFA081501E | Infineon | 13+ROHS | NI-787 | 74585 | 原裝現(xiàn)貨100% new and original in stock | |
PTFA091203 | Infineon | 13+ROHS | RF Mosfet 高頻/射頻管 | 45863 | 原裝現(xiàn)貨100% new and original in stock | |
PTFA091203EL | Infineon | 13+ROHS | RF Mosfet 高頻/射頻管 | 38538 | 原裝現(xiàn)貨100% new and original in stock |