HN1B01FDW1T1G HN1B01FDW1 -- Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount
Features
• High Voltage and High Current: VCEO = 50 V, IC = 200 mA
• High hFE: hFE = 200400
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: 3A
− Machine Model: C
• Pb−Free Package is Available
| 包裝 |
帶卷 (TR) |
| 晶體管類型 |
NPN，PNP |
| 電流 - 集電極 (Ic)（最大值） |
200mA |
| 電壓 - 集射極擊穿（最大值） |
50V |
| 不同 Ib、Ic 時的 Vce 飽和值（最大值） |
250mV @ 10mA，100mA / 300mV @ 10mA，100mA |
| 電流 - 集電極截止（最大值） |
2µA |
| 不同 Ic、Vce 時的 DC 電流增益 (hFE)（最小值） |
200 @ 2mA，6V |
| 功率 - 最大值 |
380mW |
| 頻率 - 躍遷 |
- |
| 安裝類型 |
表面貼裝 |
| 封裝/外殼 |
SC-74，SOT-457 |
| 供應商器件封裝 |
SC-74 |
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MJD is a corporation which engaged in agency electronic components. MJD Through seventeen years unrimitting efforts, aspire to provide our customers with world-leading products and service. Now already became a one of the most famous electronic components distributor in China.
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