BLF1043 UHF功率LDMOS晶體管UHF power LDMOS transistor

10 W LDMOS功率晶體管，適用于HF至1000 MHz頻率范圍的基站應(yīng)用。

特性和優(yōu)勢

方便的功率控制

極佳的強(qiáng)度

高功率增益

極佳的熱穩(wěn)定性

主要用于寬帶操作（HF至1000 MHz）

寬帶操作無內(nèi)部匹配

SMD封裝

應(yīng)用

GSM、EDGE和CDMA基站RF功率放大器

800 MHz 至1000 MHz頻率范圍內(nèi)的多載波應(yīng)用

廣播驅(qū)動器

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Source on mounting base eliminates DC isolators,

reducing common mode inductance

• Designed for broadband operation (HF to 1 GHz).

APPLICATIONS

• Communication transmitter applications in the UHF

frequency range.

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS

transistor encapsulated in a 2-lead flangeless package

(SOT538A) with a ceramic cap. The common source is

connected to the mounting base.

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