VHF功率MOS晶體管

硅柵N溝道增強(qiáng)模式垂直D-MOS晶體管，主要用于VHF頻率范圍的大型信號放大器應(yīng)用。此晶體管封裝在帶陶瓷帽的4引腳SOT123A法蘭封裝中。所有引腳均與法蘭隔離。根據(jù)要求提供匹配的柵源電壓 (VGS) 組。

特性和優(yōu)勢

高功率增益

低噪音系數(shù)

方便的功率控制

優(yōu)良的熱穩(wěn)定性

能承受不匹配的滿負(fù)載

應(yīng)用

VHF頻率范圍內(nèi)的大型信號放大器應(yīng)用

FEATURES

• High power gain

• Low noise figure

• Easy power control

• Good thermal stability

• Withstands full load mismatch.

DESCRIPTION

Silicon N-channel enhancement

mode vertical D-MOS transistor

designed for large signal amplifier

applications in the VHF frequency

range.

The transistor is encapsulated in a

4-lead SOT123 flange envelope, with

a ceramic cap. All leads are isolated

from the flange.

Matched gate-source voltage (VGS)

groups are available on request.

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