MW4IC915 MW4IC915NB MW4IC915NBR1 -- RF LDMOS Wideband Integrated Power Amplifiers
Final Application
• Typical Performance: VDD = 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA,
Pout = 15 Watts CW, Full Frequency Band (860−960 MHz)
Power Gain — 30 dB
Power Added Efficiency — 44%
Driver Application
• Typical GSM/GSM EDGE Performances: VDD = 26 Volts, IDQ1 = 60 mA,
IDQ2 = 240 mA, Pout = 3 Watts Avg., Full Frequency Band (869−894 MHz and 921−960 MHz)
Power Gain — 31 dB
Power Added Efficiency — 19%
Spectral Regrowth @ 400 kHz Offset = −65 dBc
Spectral Regrowth @ 600 kHz Offset = −83 dBc
EVM — 1.5%
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 15 Watts CW
Output Power
• Characterized with Series Equivalent Large−Signal Impedance Parameters
• On−Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
• On−Chip Current Mirror gm Reference FET for Self Biasing Application(1)
• Integrated ESD Protection
• N Suffix Indicates Lead−Free Terminations
• 200°C Capable Plastic Package
• Also Available in Gull Wing for Surface Mount
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
| Frequency |
750MHz ~ 1GHz |
| P1dB |
- |
| Gain |
30dB |
| Noise Figure |
- |
| RF Type |
Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA |
| Voltage - Supply |
26V |
| Current - Supply |
60mA |
| Test Frequency |
- |
| Package / Case |
TO-272-16 Variant, Flat Leads |
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