MW4IC915 MW4IC915NB MW4IC915NBR1 -- RF LDMOS Wideband Integrated Power Amplifiers
Final Application
• Typical Performance: VDD = 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA,
Pout = 15 Watts CW, Full Frequency Band (860−960 MHz)
Power Gain — 30 dB
Power Added Efficiency — 44%
Driver Application
• Typical GSM/GSM EDGE Performances: VDD = 26 Volts, IDQ1 = 60 mA,
IDQ2 = 240 mA, Pout = 3 Watts Avg., Full Frequency Band (869−894 MHz and 921−960 MHz)
Power Gain — 31 dB
Power Added Efficiency — 19%
Spectral Regrowth @ 400 kHz Offset = −65 dBc
Spectral Regrowth @ 600 kHz Offset = −83 dBc
EVM — 1.5%
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 15 Watts CW
Output Power
• Characterized with Series Equivalent Large−Signal Impedance Parameters
• On−Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
• On−Chip Current Mirror gm Reference FET for Self Biasing Application(1)
• Integrated ESD Protection
• N Suffix Indicates Lead−Free Terminations
• 200°C Capable Plastic Package
• Also Available in Gull Wing for Surface Mount
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Frequency |
750MHz ~ 1GHz |
P1dB |
- |
Gain |
30dB |
Noise Figure |
- |
RF Type |
Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA |
Voltage - Supply |
26V |
Current - Supply |
60mA |
Test Frequency |
- |
Package / Case |
TO-272-16 Variant, Flat Leads |
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【買家必讀】:電子元器件是專業(yè)型的產(chǎn)品,技術(shù)含量較高,本身可能存在多種品牌,後輟與封裝,可能導(dǎo)致參數(shù)與性能的差異,如有不慎,很有可能導(dǎo)致元器件購(gòu)買錯(cuò)誤,為了更好的解決您的問題,所以請(qǐng)您務(wù)必在下單前,將產(chǎn)品的封裝、後綴告訴我們。以便我們能準(zhǔn)確迅速的為您查詢。
由于客戶采購(gòu)批量與樣品的價(jià)格不同,網(wǎng)上無法統(tǒng)一注明,請(qǐng)您把采購(gòu)型號(hào)通過頁面旺旺或客服 QQ 401799895 或撥打國(guó)內(nèi)銷售部電話:0755-83957301,由客服人員為您報(bào)價(jià);有時(shí)元件廠商價(jià)格稍許變動(dòng),本公司未能及時(shí)調(diào)整,如您覺得售價(jià)稍高,請(qǐng)與我們說明并適當(dāng)議價(jià),我們會(huì)根據(jù)市場(chǎng)情況給您相應(yīng)的折扣,我們保證提供最市場(chǎng)最優(yōu)勢(shì)的價(jià)格最好元器件;感謝支持(所售元件均無含稅,需開普票7%和增值票17%的客戶請(qǐng)說明)
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