NDP6030 - P-Channel Logic Level Enhancement Mode Field Effect Transistor - Fairchild Semiconductor
Features
-30 A, -30 V. RDS(ON)
= 0.042 W @ VGS= -4.5 V
RDS(ON)
= 0.025 W @ VGS= -10 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High density cell design for extremely low RDS(ON).
175°C maximum junction temperature rating.
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