JS28F128J3C120
Intel StrataFlash® Memory
Performance
110/115/120/150 ns Initial Access Speed
125 ns Initial Access Speed (256 Mbit
density only)
25 ns Asynchronous Page mode Reads
30 ns Asynchronous Page mode Reads
(256Mbit density only)
32-Byte Write Buffer
6.8 µs per byte effective
programming time
Software
Program and Erase suspend support
Flash Data Integrator (FDI), Common
Flash Interface (CFI) Compatible
Security
128-bit Protection Register
64-bit Unique Device Identifier
64-bit User Programmable OTP Cells
Absolute Protection with VPEN = GND
Individual Block Locking
Block Erase/Program Lockout during
Power Transitions
Architecture
Multi-Level Cell Technology: High
Density at Low Cost
High-Density Symmetrical 128-Kbyte
Blocks
256 Mbit (256 Blocks) (0.18µm only)
128 Mbit (128 Blocks)
64 Mbit (64 Blocks)
32 Mbit (32 Blocks)
Quality and Reliability
Operating Temperature:
-40 °C to +85 °C
100K Minimum Erase Cycles per Block
0.18 µm ETOX™ VII Process (J3C)
0.25 µm ETOX™ VI Process (J3A)
Packaging and Voltage
56-Lead TSOP Package
64-Ball Intel®
Easy BGA Package
Lead-free packages available
48-Ball Intel®
VF BGA Package (32 and
64 Mbit) (x16 only)
VCC =
2.7 V to 3.6 V
VCCQ = 2.7 V to 3.6 V
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