ACE2305- P-Channel Enhancement Mode MOSFET - ACE Technology Co., LTD.
The ACE2305 is the P-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
15V/-3.5A, RDS(ON)=70mΩ@VGS=-4.5V
15V/-3.0A, RDS(ON)=85mΩ@VGS=-2.5V
15V/-2.0A, RDS(ON)=105mΩ@VGS=-1.8V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
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price; Sometimes manufacturer's price is unstable, so we don't adjust price in time. if you
feel price is a little high for you, just feel free to contact us for consultation. Thank
you for your support !
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