由于客戶采購(gòu)批量與樣品的價(jià)格不同，網(wǎng)上無(wú)法統(tǒng)一注明，請(qǐng)您把采購(gòu)型號(hào)通過(guò)郵件或客服QQ:2850151585 發(fā)給我們，也可以撥打明佳達(dá)國(guó)內(nèi)銷售部電話：0755-83957301，由客服人員為您報(bào)價(jià)；有時(shí)元件廠商價(jià)格稍許變動(dòng)，本公司未能及時(shí)調(diào)整，如您覺(jué)得售價(jià)稍高，請(qǐng)與我們說(shuō)明并適當(dāng)議價(jià)；感謝支持.

 

 

 

SI8417DB - P-Channel 1.8-V (G-S) MOSFET

 

 

 

CHARACTERISTICS 

  P-Channel Vertical DMOS 

  Macro Model (Subcircuit Model) 

  Level 3 MOS 

  Apply for both Linear and Switching Application

  Accurate over the −55 to 125°C Temperature Range

  Model the Gate Charge, Transient, and Diode Reverse Recovery 

Characteristics

 

 

 

DESCRIPTION  

The attached spice model describes the typical electrical 

characteristics of the p-channel vertical DMOS.  The subcircuit 

model is extracted and optimized over the  −55 to 125°C 

temperature ranges under the pulsed 0-V to 5-V gate drive. The 

saturated output impedance is best fit at the gate bias near the 

threshold voltage. 

 

 

A novel gate-to-drain feedback capacitance network is used to model 

the gate charge characteristics while avoiding convergence difficulties 

of the switched Cgd model.  All model parameter values are optimized 

to provide a best fit to the measured electrical data and are not 

intended as an exact physical interpretation of the device. 

 

 

 

Because of wholesale price is different from sample price, our website can not state.  Please send your required part number via email to Sales@hkmjd.com or add our skype id mjdccm898 for online talking. As well as welcome you call us : 0755-83957301  We will send offer for you;  Sometimes manufacturer's price is unstable, so we don't adjust price in time. if you feel price is a little high for you, just feel free to contact us for consultation. Thank you for your support ！