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TK8A65D - TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.)
High forward transfer admittance: |Yfs| = 4.5 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 650 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
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