MBRS340T3G
Surface Mount Schottky Power Rectifier
These devices employ the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
Features
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
(0.5 V Max @ 3.0 A, TJ
= 25°C)
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guard−Ring for Stress Protection
Device Passes ISO 7637 Pulse #1
Pb−Free Packages are Available
Mechanical Characteristics
Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
Weight: 217 mg (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Notch in Plastic Body Indicates Cathode Lead
Device Meets MSL 1 Requirements
ESD Ratings: Machine Model, C > 400 V
Human Body Model, 3B > 8000 V
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