N-Channel Enhancement-Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 2500 to

2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class

AB and Class C amplifier applications.

• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 

500 mA, Pout = 7 Watts Avg., f = 2615 MHz, Channel Bandwidth = 

3.84 MHz. PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain ó 16 dB

Drain Efficiency ó 22.5% 

ACPR @ 5 MHz Offset ó -42.5 dBc @ 3.84 MHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2600 MHz, 50 Watts CW

Output Power

 

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 VDDOperation

• Integrated ESD Protection

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth 

 

Applications

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

 

 

 

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