FDMS86500DC N-Channel Dual CoolTM Power Trench® MOSFET 60 V, 108 A, 2.3 mΩ
Features
Dual CoolTM
Top Side Cooling PQFN package
Max rDS(on)
= 2.3 mΩ at VGS = 10 V, ID = 29 A
Max rDS(on)
= 3.3 mΩ at VGS = 8 V, ID = 24 A
High performance technology for extremely low rDS(on)
100% UIL Tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
process.
Advancements in both silicon and Dual CoolTM
package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
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