Features

• Fast Read Access Time – 150 ns

• Automatic Page Write Operation

– Internal Address and Data Latches for 64 Bytes

• Fast Write Cycle Times

– Page Write Cycle Time: 10 ms Maximum

– 1 to 64-byte Page Write Operation

• Low Power Dissipation

– 40 mA Active Current

– 100 µA CMOS Standby Current

• Hardware and Software Data Protection

• DATA Polling and Toggle Bit for End of Write Detection

• High Reliability CMOS Technology

– Endurance: 100,000 Cycles

– Data Retention: 10 Years

• Single 5V ± 10% Supply

• CMOS and TTL Compatible Inputs and Outputs

• JEDEC Approved Byte-wide Pinout

• Commercial and Industrial Temperature Ranges

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