M29W800AT-90N1
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory
2.7V to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 80ns
PROGRAMMING TIME: 10µs typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
Program Byte-by-Byte or Word-by-Word
Status Register bits and Ready/Busy Output
SECURITY PROTECTION MEMORY AREA
INSTRUCTION ADDRESS CODING: 3 digits
MEMORY BLOCKS
Boot Block (Top or Bottom location)
Parameter and Maiblocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
Read and Program another Block during
Erase Suspend
LOW POWER CONSUMPTION
Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Top Device Code, M29W800AT: D7h
Bottom Device Code, M29W800AB: 5Bh
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