AO4914 - Dual N-Channel 30-V (D-S) MOSFET High power and current handling capability

excellent R DS(ON) and low gate charge. The two 

Dual N-Channel Enhancement Mode Field

Symbol Max Q2 Units

VDS V

VGS V

IDM

TJ, TSTG °C

Symbol

VDS

IFM

TJ Junction and Storage Temperature Range , TSTG

Power Dissipation A W

1.28

-55 to 150 °C

2

TA=70°C

Pulsed Diode Forward Current B

Continuous Forward 

Current A

PD

IF

TA=25°C

TA=70°C

Units

30 V

TA=25°C

Parameter

Reverse Voltage

2.2 A

20

3

Maximum Schottky

Max Q1

30

±20

TA=25°C 8.5

TA=70°C

Power Dissipation

PD

Pulsed Drain Current B

Continuous Drain 

Current A ID 6.6 A

30 30

8.5

6.6

W

Junction and Storage Temperature Range -55 to 150 -55 to 150

2

1.28 1.28

TA=25°C

TA=70°C

2

Gate-Source Voltage ±20

30

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

AO4914

Features

Q1 Q2

VDS (V) = 30V VDS(V) = 30V

ID = 8.5A ID = 8.5A

RDS(ON) < 18m? <18m? (VGS = 10V)

RDS(ON) < 28m? <28m? (VGS = 4.5V)

SCHOTTKY

VDS (V) = 30V, IF = 3A, VF<0.5V@1A

The AO4914 uses advanced trench technology to provide 

MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC 

converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further

AO4914 is Pb-free (meets ROHS & Sony 259 specifications). AO4914L is a Green Product ordering 

option. AO4914 and AO4914L are electrically identical. 

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