M29W640FT70N6
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
Features summary
Supply Voltage
VCC = 2.7V to 3.6V for Program, Erase,
Read
VPP =12 V for Fast Program (optional)
Asynchronous Random/Page Read
Page Width: 4 Words
Page Access: 25ns
Random Access: 60ns, 70ns
Programming Time
10 µs per Byte/Word typical
4 Words/8 Bytes Program
135 memory blocks
1 Boot Block and 7 Parameter Blocks,
8 KBytes each (Top or Bottom Location)
127 Main Blocks, 64 KBytes each
Program/Erase Controller
Embedded Byte/Word Program algorithms
Program/Erase Suspend and Resume
Read from any Block during Program
Suspend
Read and Program another Block during
Erase Suspend
Unlock Bypass Program command
Faster Production/Batch Programming
VPP/WP pin for Fast Program and Write Protect
Temporary Block Unprotection mode
Common Flash Interface
64-bit Security Code
Extended Memory Block
Extra block used as security block or to
store additional information
Low power consumption
Standby and Automatic Standby
100,000 Program/Erase cycles per block
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