Features

 Single Voltage Read/Write Operation: 2.65V to 3.6V

 Access Time – 70 ns

 Sector Erase Architecture

 Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout

 Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

 Fast Word Program Time – 10 µs

 Fast Sector Erase Time – 100 ms

 Suspend/Resume Feature for Erase and Program

 Supports Reading and Programming from Any Sector by Suspending Erase 

of a Different Sector

 Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending 

Programming of Any Other Byte/Word

 Low-power Operation

 10  mA  Active

 15 µA Standby

 Data Polling, Toggle Bit, Ready/Busy for End of Program Detection

 VPP Pin for Write Protection and Accelerated Program Operation

 RESET Input for Device Initialization

 Sector Lockdown Support

 TSOP and CBGA Package Options

 Top or Bottom Boot Block Configuration Available

 128-bit Protection Register

 Minimum 100,000 Erase Cycles

 Common Flash Interface (CFI)

 

 

 

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